Nano Electronic Laboratory
Our research interests
Device physics:
Main field. We are focused on CMOS reliability (High mobility subs + High K dielectrics), 2D semiconductors, transport in mesoscopic systems, non-volatile memories (RS) and sensors
Integrated Circuits (IC):
MOSFET degradation impact on the IC long-term reliability.
Facilities
Standard CMOS measurementsTechniques: I-V / V-I, C-V, multi-freq. C-V, QSCV, D_it calculation
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Low-Temperature CharacterizationTechniques: Hall Effect, DLTS, and all techniques,
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Noise MeasurementsTechniques: Random Telegraph Noise, Low Frequency Noise
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ReliabilityTechniques: Pulse I-V, current transients, TDDB, charge pumping
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RF MeasurementsTechniques: S-parameters, adaptation
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LitographyTechniques: Optical litography up to 50 microns
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Our Team
Head of Laboratory
Prof. Felix Palumbo (PhD.) Conicet Researcher felixpalumbo@gmail.com |
STAFF |
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Ing. Sebastian PazosPhD studentspazos@frba.utn.edu.ar |
Ing. Fernando AguirrePhD studentfaguirre@frba.utn.edu.ar |
Lic. Santiago BoyerasPhD studentsanboyeras@gmail.com |
Dr. Hernan GiannettaPostDoc Conicethgiannetta@frba.utn.edu.ar |
Ing. Gabriel MaroliPhD studentmaro@est.frba.utn.edu.ar |